INFLUENCE OF THE X-RAY IRRADIATION ON A CRYSTALS e-TlInS2 POLITIPES CONDUCTIVITY


ABSTRACT

Gololobov Yu.P., Borovoy N.A. An influence of the x-ray irradiation on a crystals e-TlInS2 politipes conductivity. Visnyk National Transport University. Series «Technical sciences». Scientific and Technical Collection. - Kyiv: National Transport University, 2021. - Issue 1 (48).

It was investigated the influence of temperature changes on conductivity of a non-irradiated and X- ray radiated samples of e-TlInS2 crystals polytypies.

Object of the study - irradiated and radiated samples of e-TlInS2 crystals polytypes.

Purpose of the study - experimental investigation conductivity temperature dependences on the DC (direct current) e-TlInS2 crystals irradiated and X-ray radiated С- and 2С- polytypes.

Method of the study - the temperature dependence of electrical conductivity on DC was experimentally investigated in temperature range Т = 100-300 K for the non-irradiated and X-ray radiated C- and 2C-polytypes of e-TlInS2 crystals. It is shown that the basic mechanism of transfer of charge in the temperatures interval T=130-165 K for both e-TlInS2 crystals polytypies is variable range hopping conduction and such temperature intervals are wider in case of the radiated samples. The densities of localized states near the Fermi level were calculated, for both non-irradiated and X-ray radiatied (dose 2.7х103 Gy) samples of e-TlInS2 crystals polytypies. It was discovered that irradiation by the indicated dose of X-ray radiation of the samples both crystals e-TlInS2 polytypies increase of their conductivity, almost on an order, and also is accompanied by disappearance for non-irradiated sample of C-polytype unusual for semiconductors temperatures change of conductivity in the interval T=196-214 K.

KEYWORDS: POLYTYPES, X-RAYS RADIATION, CONDUCTIVITY, SEMICONDUCTORS, HOPPING CONDUCTIVITY

REFERENCES

  1. Seyidov M. Yu. Photoelectric activity of defects in La-doped layered TlInS2 crystals / M. Yu. Seyidov, R.A. Suleymanov, E. Acaret al// Low Temperature Physics. - 2014. V.40. No 9. P.1062-1070.
  2. M.Panich. Electronic properties and phase transitions in low-dimentional semiconductors /// J. Phys. C. - 2008. - V. 20. -Р. 293202-293242.
  3. Panich A. Phase transitions and Incommensurability in the layered semiconductor TlInS2 _ an NMR study / Panich, D. Mogilyansky, R. Sardarly // J. Phys. C. - 2012. - V.24. -Р. 135901-135905.
  4. Ashraf I.M. Photoelectrical Properties of TlInS2 Layered Single Crystals International Journal of Modern Physics B. - January 2019. - V. 22 (17). - P.2701-2712.
  5. Borovoy N.A. The appearance and transformation of an incommensurate modulated structure in the polytypes of semiconductors TlInS2 / N.A. Borovoy, Yu.P. Gololobov, A.V. Nikolaienko et al. // Visnyk National Transport University. Series «Technical sciences». Scientific and Technical Collection. - Kyiv: National Transport University. - 2016. -No1(34). -Р. 60-69. (Ukr).
  6. El-Nahass M.M. Characteristics of dielectric properties and conduction mechanism of TlInS2:Cu single crystals /M.M. El-Nahass, H.A.M. Alin, E.F.M. El-Zaidia// Physica B. - 2013. - V. 431. - P.54-57.
  7. Volkov A. A. Structure phase transitions in TlInS2 / A. A. Volkov, Yu. G. Goncharov, G. V. Kozlov et al.// Sov. Phys. Solid State. - 1983. - V.25. - P.2061-2064.
  8. Vakhrushev S. B. Incommensurate phase transition in a TlInS2 crystal / S. B. Vakhrushev, V. V. Zhdanova, Kvyatkovskii B. E. et al.//JETF Letters. - 1984. - V. 39. - No. 6. - P. 291.
  9. Kashida S. X-ray study of the incommensurate phase of TlInS2 / S. Kashida, Y. Kobayashi // J. Phys. C. - 1999. - V. 11. - P. 1027-1035.
  10. Salnik A. The incommensurate phase transformation in TlInS2 ferroelectric / A. Salnik, Yu. Gololobov, N. Borovoi // Ferroelectrics.- 2015. V. 484. - Р. 62-68.
  11. Alekperov O.Z. and Nadjafov A. I. Dielectric anomalies in monoclinic TlInS2 Inorg. Mater. -2004. - V.40. - P.1248-1251.
  12. Borovoi N. A. About the Ferroelectric Phase Transition in Polytypes of e-TlInS2/ N. A. Borovoi, Yu. P.Gololobov, A. N. Gorb et al. // Phys. Sol. State. 2008, 50, 1946.
  13. Gololobov Yu.P. Ferroelectric phases in the polytypes of TlInS2 ternary compound / Yu.P. Golo­lobov, N. A. Borovoy, A.I.Polovina et al.// Phys. Status Solidi C. - 2009. -V.6, No 5. - P. 989-992.
  14. Sardarly R. M. Relaxor properties and the mechanism of conduction in TlInS2 crystals exposed to gamma irradiation/ R. M. Sardarly, O. A. Samedov, I. Sh. Sadykhov et al. // Physics of the Solid State.- 2005. - V. 47. - No. 9. - P. 1729-1733.
  15. Sheleg A.U., Gurtovoi V.G., Shevtsova V.V., Mustafaeva S.N. and Kerimova E.M.. Effect of ionizing radiation on the dielectric characteristics of TlInS2 and TlGaS2 single crystals. Phys. Sol. State. - 2012. - V.54. - No. 9. - P. 1870-1874.
  16. Sheleg A. U. Low Temperature X-Ray Investigations of TlInS2, TlGaS2 and TlGaSe2 Single Crystals. / U. Sheleg, V. V. Shevtsova, V. G. Hurtavy et al. // Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques. - 2013. - V.7. - No.11. - P.39-42/
  17. Borovoy N.A. А conductivity on the direct current of crystals TlInS2 polytypes / N.A. Borovoy, Yu.P. Gololobov, A.V. Nikolaienko et al. // Visnyk National Transport University. Series «Technical sciences». Scientific and Technical Collection. - Kyiv: National Transport University. - 2017. -No1(37). -Р. 26-34. (Ukr).
  18. Mustafaeva S.N. Investigation of dc hopping conduction in TlGaS2 and TlInS2 single crystals./ S.N.Mustafaeva, V.A. Aliev, M.M. Asadov// Phys. Sol. State. - 1998. - V.40. - No.4. - P.561-563.
  19. F. Mott, E.A. Davis. Electronic Processes in Non-Crystalline materials. New York, USA: Oxford University Press Inc, 1979. - 605 p.

AUTHOR

Gololobov Yurii P., doctor of sciences, professor, National Transport University, professor of department, Kyiv, e-mail: «Yuriy Gololobov» <gololo@ukr.net>, tel. +380442846709, Ukraine, 01103, Kyiv, M. Boychuk str., 42, of. 406, orcid.org/0000-0003-3360-6669.

Borovoy Mykola O., doctor of sciences, professor, Kyiv Taras Shevchenko National University, head department of general physics, e-mail: borovoy@univ.kiev.ua, tel. +380445262288, Ukraine, 03680, Kyiv, Acad. Glushkoa Prosp.2, build. 1, of. 225, orcid.org/0000-0002-2435-2620.

REVIEWER

IGulyayev V.I., Engineering sciences (Dr.), professor, National Transport University, head department of mathematics, Kyiv, Ukraine.

Ilin Р.Р., Ph. D., associate professor, National University of Life and Environmental Sciences of Ukraine, associate professor department of physics, Kyiv, Ukraine.

 


Article language: Ukrainian

Open Access: http://publications.ntu.edu.ua/visnyk/48/101-108.pdf

Print date: 15.03.2021

Online publication date: 05.04.2021

 


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